| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Tegangan - Uji: | 1520pF @ 10V |
| Tegangan - Breakdown: | DIRECTFET™ SQ |
| Vgs (th) (Max) @ Id: | 6.8 mOhm @ 15A, 10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Seri: | HEXFET® |
| Status RoHS: | Tape & Reel (TR) |
| Rds Pada (Max) @ Id, Vgs: | 15A (Ta), 66A (Tc) |
| Polarisasi: | DirectFET™ Isometric SQ |
| Nama lain: | IRF6610 IRF6610-ND SP001526776 |
| Suhu Operasional: | -40°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Tingkat Sensitivitas Kelembaban (MSL): | 3 (168 Hours) |
| Nomor Bagian Produsen: | IRF6610TR1 |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 17nC @ 4.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.55V @ 250µA |
| Fitur FET: | N-Channel |
| Deskripsi yang Diperluas: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
| Tiriskan untuk Sumber Tegangan (Vdss): | - |
| Deskripsi: | MOSFET N-CH 20V 15A DIRECTFET |
| Current - Continuous Drain (Id) @ 25 ° C: | 20V |
| kapasitansi Ratio: | 2.2W (Ta), 42W (Tc) |
| Email: | [email protected] |
