| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Test: | 1520pF @ 10V |
| Voltage - Breakdown: | DIRECTFET™ SQ |
| Vgs(th) (Max) @ Id: | 6.8 mOhm @ 15A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | HEXFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 15A (Ta), 66A (Tc) |
| Polarization: | DirectFET™ Isometric SQ |
| Other Names: | IRF6610 IRF6610-ND SP001526776 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Manufacturer Part Number: | IRF6610TR1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 17nC @ 4.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.55V @ 250µA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 20V 15A DIRECTFET |
| Current - Continuous Drain (Id) @ 25°C: | 20V |
| Capacitance Ratio: | 2.2W (Ta), 42W (Tc) |
| Email: | [email protected] |
