| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | DIRECTFET™ SQ |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
| Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | DirectFET™ Isometric SQ |
| Other Names: | IRF6610TRPBFCT |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1520pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 66A (Tc) |
| Email: | [email protected] |
