| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | DIRECTFET™ MX |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 27A, 10V |
| Power Dissipation (Max): | 3.9W (Ta), 89W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | DirectFET™ Isometric MX |
| Other Names: | IRF6611TR1CT |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 4860pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 32A (Ta), 150A (Tc) 3.9W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Ta), 150A (Tc) |
| Email: | [email protected] |
