| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 2V @ 250µA |
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | DIRECTFET™ MT |
| Seri: | HEXFET® |
| Rds Pada (Max) @ Id, Vgs: | 3.3 mOhm @ 25A, 10V |
| Power Disipasi (Max): | 3.6W (Ta), 42W (Tc) |
| Pengemasan: | Tape & Reel (TR) |
| Paket / Case: | DirectFET™ Isometric MT |
| Nama lain: | IRF6607-ND IRF6607TR SP001532212 |
| Suhu Operasional: | -40°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 6930pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 4.5V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 7V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 30V |
| Detil Deskripsi: | N-Channel 30V 27A (Ta), 94A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT |
| Current - Continuous Drain (Id) @ 25 ° C: | 27A (Ta), 94A (Tc) |
| Email: | [email protected] |
