| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 3V @ 250µA |
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | DIRECTFET™ ST |
| Seri: | HEXFET® |
| Rds Pada (Max) @ Id, Vgs: | 9 mOhm @ 13A, 10V |
| Power Disipasi (Max): | 2.1W (Ta), 42W (Tc) |
| Pengemasan: | Cut Tape (CT) |
| Paket / Case: | DirectFET™ Isometric ST |
| Nama lain: | *IRF6608 IRF6608CT |
| Suhu Operasional: | -40°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 2120pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 30V |
| Detil Deskripsi: | N-Channel 30V 13A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST |
| Current - Continuous Drain (Id) @ 25 ° C: | 13A (Ta), 55A (Tc) |
| Email: | [email protected] |
