| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
| Paket Perangkat pemasok: | ISOPLUS i4-PAC™ |
| Seri: | GigaMOS™, HiPerFET™, TrenchT2™ |
| Rds Pada (Max) @ Id, Vgs: | 20 mOhm @ 55A, 10V |
| Listrik - Max: | 180W |
| Pengemasan: | Tube |
| Paket / Case: | i4-Pac™-5 |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 8600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| FET Jenis: | 2 N-Channel (Dual) |
| Fitur FET: | Standard |
| Tiriskan untuk Sumber Tegangan (Vdss): | 150V |
| Detil Deskripsi: | Mosfet Array 2 N-Channel (Dual) 150V 53A 180W Through Hole ISOPLUS i4-PAC™ |
| Current - Continuous Drain (Id) @ 25 ° C: | 53A |
| Nomor Bagian Dasar: | FMM |
| Email: | [email protected] |
