| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
| Series: | GigaMOS™, HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 55A, 10V |
| Power - Max: | 180W |
| Packaging: | Tube |
| Package / Case: | i4-Pac™-5 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 8600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 150V |
| Detailed Description: | Mosfet Array 2 N-Channel (Dual) 150V 53A 180W Through Hole ISOPLUS i4-PAC™ |
| Current - Continuous Drain (Id) @ 25°C: | 53A |
| Base Part Number: | FMM |
| Email: | [email protected] |
