| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
| Leverandør Device Package: | ISOPLUS i4-PAC™ |
| Serie: | GigaMOS™, HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 55A, 10V |
| Strøm - Max: | 180W |
| Emballage: | Tube |
| Pakke / tilfælde: | i4-Pac™-5 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 8600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funktion: | Standard |
| Afløb til Source Voltage (VDSS): | 150V |
| Detaljeret beskrivelse: | Mosfet Array 2 N-Channel (Dual) 150V 53A 180W Through Hole ISOPLUS i4-PAC™ |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 53A |
| Basenummer: | FMM |
| Email: | [email protected] |
