SIRA00DP-T1-RE3
Part Number:
SIRA00DP-T1-RE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 30V 100A POWERPAKSO
Quantity:
55922 Pieces
Delivery Time:
1-2 days
Data sheet:
SIRA00DP-T1-RE3.pdf

Introduction

SIRA00DP-T1-RE3 best price and fast delivery.
BOSER Technology is the distributor for SIRA00DP-T1-RE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIRA00DP-T1-RE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):+20V, -16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:1 mOhm @ 20A, 10V
Power Dissipation (Max):104W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SO-8
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Manufacturer Standard Lead Time:32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:11700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:220nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Email:[email protected]

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