SIR882DP-T1-GE3
SIR882DP-T1-GE3
Part Number:
SIR882DP-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 100V 60A PPAK SO-8
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
71140 Pieces
Delivery Time:
1-2 days
Data sheet:
SIR882DP-T1-GE3.pdf

Introduction

SIR882DP-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SIR882DP-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIR882DP-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.8V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:8.7 mOhm @ 20A, 10V
Power Dissipation (Max):5.4W (Ta), 83W (Tc)
Packaging:Original-Reel®
Package / Case:PowerPAK® SO-8
Other Names:SIR882DP-T1-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1930pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Email:[email protected]

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