| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | 4-DIP, Hexdip, HVMDIP |
| Seri: | - |
| Rds Pada (Max) @ Id, Vgs: | 200 mOhm @ 860mA, 10V |
| Power Disipasi (Max): | 1W (Tc) |
| Pengemasan: | Tube |
| Paket / Case: | 4-DIP (0.300", 7.62mm) |
| Nama lain: | *IRFD010PBF |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 50V |
| Detil Deskripsi: | N-Channel 50V 1.7A (Tc) 1W (Tc) Through Hole 4-DIP, Hexdip, HVMDIP |
| Current - Continuous Drain (Id) @ 25 ° C: | 1.7A (Tc) |
| Email: | [email protected] |
