| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | 4-DIP, Hexdip, HVMDIP |
| Seri: | - |
| Rds Pada (Max) @ Id, Vgs: | 540 mOhm @ 600mA, 10V |
| Power Disipasi (Max): | 1.3W (Ta) |
| Pengemasan: | Tube |
| Paket / Case: | 4-DIP (0.300", 7.62mm) |
| Nama lain: | *IRFD110 IRFD111 IRFD112 |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 180pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 100V |
| Detil Deskripsi: | N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP |
| Current - Continuous Drain (Id) @ 25 ° C: | 1A (Ta) |
| Email: | [email protected] |
