| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 1.1V @ 250µA |
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 6-microfoot |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 53 mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max): | 2.77W (Ta), 13W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 6-UFBGA |
| Andre navne: | SI8497DB-T2-E1TR SI8497DBT2E1 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1320pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 2V, 4.5V |
| Afløb til Source Voltage (VDSS): | 30V |
| Detaljeret beskrivelse: | P-Channel 30V 13A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 13A (Tc) |
| Email: | [email protected] |
