| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 900mV @ 250µA |
| Vgs (Max): | ±8V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 4-MICRO FOOT® (1.6x1.6) |
| Serie: | TrenchFET® Gen III |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 3A, 4.5V |
| Power Dissipation (Max): | 2.8W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 4-UFBGA |
| Andre navne: | SI8481DB-T1-E1TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2500pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 1.8V, 4.5V |
| Afløb til Source Voltage (VDSS): | 20V |
| Detaljeret beskrivelse: | P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6) |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9.7A (Tc) |
| Email: | [email protected] |
