| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 800mV @ 250µA |
| Vgs (Max): | ±5V |
| Teknologi: | MOSFET (Metal Oxide) |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 64 mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max): | 780mW (Ta), 1.8W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | 4-UFBGA |
| Andre navne: | SI8469DB-T2-E1CT |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 900pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V |
| Afløb til Source Voltage (VDSS): | 8V |
| Detaljeret beskrivelse: | P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4.6A (Ta) |
| Email: | [email protected] |
