| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 1.1V @ 250µA |
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | 6-microfoot |
| Seri: | TrenchFET® |
| Rds Pada (Max) @ Id, Vgs: | 53 mOhm @ 1.5A, 4.5V |
| Power Disipasi (Max): | 2.77W (Ta), 13W (Tc) |
| Pengemasan: | Tape & Reel (TR) |
| Paket / Case: | 6-UFBGA |
| Nama lain: | SI8497DB-T2-E1TR SI8497DBT2E1 |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1320pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
| FET Jenis: | P-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 2V, 4.5V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 30V |
| Detil Deskripsi: | P-Channel 30V 13A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot |
| Current - Continuous Drain (Id) @ 25 ° C: | 13A (Tc) |
| Email: | [email protected] |
