| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2.5V @ 100µA, 2.5V @ 20µA |
| Supplier Device Package: | 9-BGA (1.35x1.35) |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
| Power - Max: | - |
| Packaging: | Original-Reel® |
| Package / Case: | 9-VFBGA |
| Other Names: | 917-EPC2108ENGRDKR |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 22pF @ 30V, 7pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.22nC @ 5V, 0.044nC @ 5V |
| FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 60V, 100V |
| Detailed Description: | Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A, 500mA |
| Email: | [email protected] |
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