| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2.5V @ 700µA |
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4A, 5V |
| Power - Max: | - |
| Packaging: | Cut Tape (CT) |
| Package / Case: | Die |
| Other Names: | 917-1152-1 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 14 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 60V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 5V |
| FET Type: | 2 N-Channel (Dual) Common Drain |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 120V |
| Detailed Description: | Mosfet Array 2 N-Channel (Dual) Common Drain 120V 3.4A Die |
| Current - Continuous Drain (Id) @ 25°C: | 3.4A |
| Email: | [email protected] |
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