EPC2107ENGRT
EPC2107ENGRT
Part Number:
EPC2107ENGRT
Manufacturer:
EPC
Description:
TRANS GAN 3N-CH 100V BUMPED DIE
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
85021 Pieces
Delivery Time:
1-2 days
Data sheet:
EPC2107ENGRT.pdf

Introduction

EPC2107ENGRT best price and fast delivery.
BOSER Technology is the distributor for EPC2107ENGRT, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EPC2107ENGRT by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package:9-BGA (1.35x1.35)
Series:eGaN®
Rds On (Max) @ Id, Vgs:320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Power - Max:-
Packaging:Tape & Reel (TR)
Package / Case:9-VFBGA
Other Names:917-EPC2107ENGRTR
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:16pF @ 50V, 7pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:0.16nC @ 5V, 0.044nC @ 5V
FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):100V
Detailed Description:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Current - Continuous Drain (Id) @ 25°C:1.7A, 500mA
Email:[email protected]

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