| Tillstånd | New and Original |
|---|---|
| Ursprung | Contact us |
| Distributör | Boser Technology |
| Vgs (th) (Max) @ Id: | 4.8V @ 700µA |
| Vgs (Max): | ±20V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Leverantörs Device Package: | TO-247-3 |
| Serier: | - |
| Rds On (Max) @ Id, Vgs: | 41 mOhm @ 30A, 8V |
| Effektdissipation (Max): | 156W (Tc) |
| Förpackning / Fodral: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 3 (168 Hours) |
| Tillverkarens normala ledtid: | 15 Weeks |
| Ledningsfri status / RoHS-status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1500pF @ 400V |
| Gate Laddning (Qg) (Max) @ Vgs: | 36nC @ 8V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Drivspänning (Max Rds På, Min Rds På): | 8V |
| Avlopp till källspänning (Vdss): | 650V |
| detaljerad beskrivning: | N-Channel 650V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 46.5A (Tc) |
| Email: | [email protected] |
