| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 4.8V @ 700µA |
| Vgs (Max): | ±20V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Paket Perangkat pemasok: | TO-247-3 |
| Seri: | - |
| Rds Pada (Max) @ Id, Vgs: | 41 mOhm @ 30A, 8V |
| Power Disipasi (Max): | 156W (Tc) |
| Paket / Case: | TO-247-3 |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Manufacturer Standard Lead Time: | 15 Weeks |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1500pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 8V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 8V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 650V |
| Detil Deskripsi: | N-Channel 650V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3 |
| Current - Continuous Drain (Id) @ 25 ° C: | 46.5A (Tc) |
| Email: | [email protected] |
