| Tillstånd | New and Original |
|---|---|
| Ursprung | Contact us |
| Distributör | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | 4-HVMDIP |
| Serier: | - |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 800mA, 10V |
| Effektdissipation (Max): | 1W (Tc) |
| Förpackning: | Tube |
| Förpackning / Fodral: | 4-DIP (0.300", 7.62mm) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Ledningsfri status / RoHS-status: | Contains lead / RoHS non-compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 200pF @ 25V |
| Gate Laddning (Qg) (Max) @ Vgs: | 7nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Drivspänning (Max Rds På, Min Rds På): | 10V |
| Avlopp till källspänning (Vdss): | 60V |
| detaljerad beskrivning: | N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 800mA (Tc) |
| Email: | [email protected] |
