| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | 4-HVMDIP |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 800mA, 10V |
| Verlustleistung (max): | 1W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | 4-DIP (0.300", 7.62mm) |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Contains lead / RoHS non-compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 60V |
| detaillierte Beschreibung: | N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 800mA (Tc) |
| Email: | [email protected] |
