IRFD113
Part Number:
IRFD113
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 60V 800MA 4-DIP
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
31593 Pieces
Delivery Time:
1-2 days
Data sheet:
IRFD113.pdf

Introduction

IRFD113 best price and fast delivery.
BOSER Technology is the distributor for IRFD113, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IRFD113 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-HVMDIP
Series:-
Rds On (Max) @ Id, Vgs:800 mOhm @ 800mA, 10V
Power Dissipation (Max):1W (Tc)
Packaging:Tube
Package / Case:4-DIP (0.300", 7.62mm)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Email:[email protected]

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