| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Tegangan - Uji: | 15330pF @ 25V |
| Tegangan - Breakdown: | D2PAK |
| Vgs (th) (Max) @ Id: | 1.95 mOhm @ 100A, 10V |
| Vgs (Max): | 4.5V, 10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Seri: | HEXFET®, StrongIRFET™ |
| Status RoHS: | Tape & Reel (TR) |
| Rds Pada (Max) @ Id, Vgs: | 195A (Tc) |
| Polarisasi: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Nama lain: | IRL60S216TR SP001573906 |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Surface Mount |
| Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 14 Weeks |
| Nomor Bagian Produsen: | IRL60S216 |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 255nC @ 4.5V |
| IGBT Jenis: | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.4V @ 250µA |
| Fitur FET: | N-Channel |
| Deskripsi yang Diperluas: | N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D2PAK |
| Tiriskan untuk Sumber Tegangan (Vdss): | - |
| Deskripsi: | MOSFET N-CH 60V 195A |
| Current - Continuous Drain (Id) @ 25 ° C: | 60V |
| kapasitansi Ratio: | 375W (Tc) |
| Email: | [email protected] |
