| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 2.6V @ 500µA |
| Vgs (Max): | ±18V |
| Technologie: | GaNFET (Gallium Nitride) |
| Supplier Device-Gehäuse: | TO-220AB |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 8V |
| Verlustleistung (max): | 81W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-220-3 |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 6 Weeks |
| Eingabekapazität (Ciss) (Max) @ Vds: | 720pF @ 480V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 8V |
| Drain-Source-Spannung (Vdss): | 650V |
| detaillierte Beschreibung: | N-Channel 650V 16A (Tc) 81W (Tc) Through Hole TO-220AB |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 16A (Tc) |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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TPH3208PS | Transphorm | MOSFET N-CH 650V 20A TO220 | Anfrage |
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TPH3205WSB | Transphorm | MOSFET N-CH 650V 36A TO247 | Anfrage |
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TPH3208LS | Transphorm | MOSFET N-CH 650V 20A PQFN | Anfrage |
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