| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
| Vgs (Max): | ±18V |
| Technology: | GaNFET (Gallium Nitride) |
| Supplier Device Package: | TO-220AB |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 8V |
| Power Dissipation (Max): | 81W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 6 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 480V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 8V |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | N-Channel 650V 16A (Tc) 81W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Email: | [email protected] |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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