| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| Spannung - Kollektor-Emitter-Durchbruch (max): | 900V |
| VCE (on) (Max) @ Vge, Ic: | 3.1V @ 15V, 38A |
| Testbedingung: | 600V, 38A, 4.7 Ohm, 15V |
| Td (ein / aus) bei 25 ° C: | 18ns/131ns |
| Schaltenergie: | 1857µJ (on), 2311µJ (off) |
| Supplier Device-Gehäuse: | TO-247 [B] |
| Serie: | - |
| Leistung - max: | 500W |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-247-3 |
| Andere Namen: | APT64GA90BMI APT64GA90BMI-ND |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 29 Weeks |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabetyp: | Standard |
| IGBT-Typ: | PT |
| Gate-Ladung: | 162nC |
| detaillierte Beschreibung: | IGBT PT 900V 117A 500W Through Hole TO-247 [B] |
| Strom - Collector Pulsed (Icm): | 193A |
| Strom - Kollektor (Ic) (max): | 117A |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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APT65GP60L2DQ2G | Microsemi | IGBT 600V 198A 833W TO264 | Anfrage |
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APT65GP60B2G | Microsemi | IGBT 600V 100A 833W TMAX | Anfrage |
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APT64GA90B2D30 | Microsemi | IGBT 900V 117A 500W TO-247 | Anfrage |
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APT60N60SCSG | Microsemi | MOSFET N-CH 600V 60A D3PAK | Anfrage |
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APT60S20SG/TR | Microsemi Corporation | DIODE SCHOTTKY 200V 75A D3PAK | Anfrage |
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APT60S20SG | Microsemi Corporation | DIODE SCHOTTKY 200V 75A D3 | Anfrage |
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APT60S20BG | Microsemi | DIODE SCHOTTKY 200V 75A TO247 | Anfrage |
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APT64GA90LD30 | Microsemi | IGBT 900V 117A 500W TO-264 | Anfrage |
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APT65GP60J | Microsemi | IGBT 600V 130A 431W SOT227 | Anfrage |
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