HGT1S2N120CN
Part Number:
HGT1S2N120CN
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
IGBT 1200V 13A 104W I2PAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
40208 Pieces
Delivery Time:
1-2 days
Data sheet:
HGT1S2N120CN.pdf

Introduction

HGT1S2N120CN best price and fast delivery.
BOSER Technology is the distributor for HGT1S2N120CN, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HGT1S2N120CN by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 2.6A
Test Condition:960V, 2.6A, 51 Ohm, 15V
Td (on/off) @ 25°C:25ns/205ns
Switching Energy:96µJ (on), 355µJ (off)
Supplier Device Package:TO-262
Series:-
Power - Max:104W
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:NPT
Gate Charge:30nC
Detailed Description:IGBT NPT 1200V 13A 104W Through Hole TO-262
Current - Collector Pulsed (Icm):20A
Current - Collector (Ic) (Max):13A
Email:[email protected]

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