HGTD1N120BNS9A
Part Number:
HGTD1N120BNS9A
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
IGBT 1200V 5.3A 60W TO252AA
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
61048 Pieces
Delivery Time:
1-2 days
Data sheet:
HGTD1N120BNS9A.pdf

Introduction

HGTD1N120BNS9A best price and fast delivery.
BOSER Technology is the distributor for HGTD1N120BNS9A, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HGTD1N120BNS9A by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 1A
Test Condition:960V, 1A, 82 Ohm, 15V
Td (on/off) @ 25°C:15ns/67ns
Switching Energy:70µJ (on), 90µJ (off)
Supplier Device Package:TO-252AA
Series:-
Power - Max:60W
Packaging:Original-Reel®
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:HGTD1N120BNS9ADKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:44 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:NPT
Gate Charge:14nC
Detailed Description:IGBT NPT 1200V 5.3A 60W Surface Mount TO-252AA
Current - Collector Pulsed (Icm):6A
Current - Collector (Ic) (Max):5.3A
Base Part Number:HGTD1N120
Email:[email protected]

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