HGTD3N60C3S9A
Part Number:
HGTD3N60C3S9A
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
IGBT 600V 6A 33W TO252AA
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
64405 Pieces
Delivery Time:
1-2 days
Data sheet:
HGTD3N60C3S9A.pdf

Introduction

HGTD3N60C3S9A best price and fast delivery.
BOSER Technology is the distributor for HGTD3N60C3S9A, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HGTD3N60C3S9A by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 3A
Test Condition:480V, 3A, 82 Ohm, 15V
Td (on/off) @ 25°C:-
Switching Energy:85µJ (on), 245µJ (off)
Supplier Device Package:TO-252AA
Series:-
Power - Max:33W
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Gate Charge:10.8nC
Detailed Description:IGBT 600V 6A 33W Surface Mount TO-252AA
Current - Collector Pulsed (Icm):24A
Current - Collector (Ic) (Max):6A
Email:[email protected]

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