HGT1S10N120BNST
HGT1S10N120BNST
Part Number:
HGT1S10N120BNST
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
IGBT 1200V 35A 298W TO263AB
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
85281 Pieces
Delivery Time:
1-2 days
Data sheet:
HGT1S10N120BNST.pdf

Introduction

HGT1S10N120BNST best price and fast delivery.
BOSER Technology is the distributor for HGT1S10N120BNST, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HGT1S10N120BNST by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Test Condition:960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C:23ns/165ns
Switching Energy:320µJ (on), 800µJ (off)
Supplier Device Package:TO-263AB
Series:-
Power - Max:298W
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:HGT1S10N120BNST-ND
HGT1S10N120BNSTTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:44 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:NPT
Gate Charge:100nC
Detailed Description:IGBT NPT 1200V 35A 298W Surface Mount TO-263AB
Current - Collector Pulsed (Icm):80A
Current - Collector (Ic) (Max):35A
Base Part Number:HGT1S10N120
Email:[email protected]

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