HGT1S12N60A4DS
HGT1S12N60A4DS
Part Number:
HGT1S12N60A4DS
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
IGBT 600V 54A 167W D2PAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
48686 Pieces
Delivery Time:
1-2 days
Data sheet:
HGT1S12N60A4DS.pdf

Introduction

HGT1S12N60A4DS best price and fast delivery.
BOSER Technology is the distributor for HGT1S12N60A4DS, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HGT1S12N60A4DS by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 12A
Test Condition:390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C:17ns/96ns
Switching Energy:55µJ (on), 50µJ (off)
Supplier Device Package:TO-263AB
Series:-
Reverse Recovery Time (trr):30ns
Power - Max:167W
Packaging:Tube
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Gate Charge:78nC
Detailed Description:IGBT 600V 54A 167W Surface Mount TO-263AB
Current - Collector Pulsed (Icm):96A
Current - Collector (Ic) (Max):54A
Base Part Number:HGT1S12N60
Email:[email protected]

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