| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Vgs (Max): | +25V, -5V |
| Technology: | SiCFET (Silicon Carbide) |
| Supplier Device Package: | TO-247-3 |
| Series: | Z-FET™ |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 20A, 20V |
| Power Dissipation (Max): | 215W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-247-3 |
| Operating Temperature: | -55°C ~ 135°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1915pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs: | 90.8nC @ 20V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 20V |
| Drain to Source Voltage (Vdss): | 1200V |
| Detailed Description: | N-Channel 1200V 42A (Tc) 215W (Tc) Through Hole TO-247-3 |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Email: | [email protected] |
