| Tillstånd | New and Original |
|---|---|
| Ursprung | Contact us |
| Distributör | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 10mA |
| Vgs (Max): | +25V, -10V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverantörs Device Package: | TO-247-4L |
| Serier: | C2M™ |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 28A, 20V |
| Effektdissipation (Max): | 277W (Tc) |
| Förpackning / Fodral: | TO-247-4 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | Not Applicable |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2250pF @ 1000V |
| Gate Laddning (Qg) (Max) @ Vgs: | 120nC @ 20V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Drivspänning (Max Rds På, Min Rds På): | 20V |
| Avlopp till källspänning (Vdss): | 1700V |
| detaljerad beskrivning: | N-Channel 1700V 40A (Tc) 277W (Tc) Through Hole TO-247-4L |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 40A (Tc) |
| Email: | [email protected] |
