| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 570µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220 |
| Serie: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 5.8A, 10V |
| Power Dissipation (Max): | 165W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | TK12E80W,S1X(S TK12E80WS1X |
| Driftstemperatur: | 150°C |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1400pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 800V |
| Detaljeret beskrivelse: | N-Channel 800V 11.5A (Ta) 165W (Tc) Through Hole TO-220 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11.5A (Ta) |
| Email: | [email protected] |
