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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET'er, MOSFET'er - Single > TK12A60U(Q,M)
TK12A60U(Q,M)
TK12A60U(Q,M)
Varenummer:
TK12A60U(Q,M)
Fabrikant:
Toshiba Semiconductor and Storage
Beskrivelse:
MOSFET N-CH 600V 12A TO220SIS
[LeadFreeStatus]未找到翻译
Blyfri / RoHS-kompatibel
Antal:
56308 Pieces
Leveringstid:
1-2 days
Datablad:
1.TK12A60U(Q,M).pdf2.TK12A60U(Q,M).pdf
Forespørgsel

Introduktion

TK12A60U(Q,M) bedste pris og hurtig levering.
BOSER Technology er distributør for TK12A60U(Q,M), vi har bestande til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan for TK12A60U(Q,M) via e-mail, vi vil give dig den bedste pris i henhold til din plan.
Vores email: [email protected]

specifikationer

Tilstand New and Original
Oprindelse Contact us
Distributør Boser Technology
Vgs (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:TO-220SIS
Serie:DTMOSII
Rds On (Max) @ Id, Vgs:400 mOhm @ 6A, 10V
Power Dissipation (Max):35W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-220-3 Full Pack
Andre navne:TK12A60U(Q)
TK12A60U(Q)-ND
TK12A60U(QM)
TK12A60UQ-ND
TK12A60UQM
Driftstemperatur:150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:720pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):600V
Detaljeret beskrivelse:N-Channel 600V 12A (Ta) 35W (Tc) Through Hole TO-220SIS
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:12A (Ta)
Email:[email protected]

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