| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® 1212-8 |
| Serie: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 12A, 10V |
| Power Dissipation (Max): | 62.5W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® 1212-8 |
| Andre navne: | SQS423EN-T1_GE3-ND SQS423EN-T1_GE3TR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1975pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 30V |
| Detaljeret beskrivelse: | P-Channel 30V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 16A (Tc) |
| Email: | [email protected] |
