| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 3.5V @ 1mA |
| Vgs (Max): | +25V, -10V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | HiP247™ |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 290 mOhm @ 10A, 20V |
| Power Dissipation (Max): | 175W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Andre navne: | 497-15170 |
| Driftstemperatur: | -55°C ~ 200°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 650pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 20V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 20V |
| Afløb til Source Voltage (VDSS): | 1200V |
| Detaljeret beskrivelse: | N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole HiP247™ |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20A (Tc) |
| Email: | [email protected] |
