| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 5.6V @ 10mA |
| Vgs (Max): | +22V, -4V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | TO-247N |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 52 mOhm @ 20A, 18V |
| Power Dissipation (Max): | 262W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Driftstemperatur: | 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1337pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 18V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 18V |
| Afløb til Source Voltage (VDSS): | 1200V |
| Detaljeret beskrivelse: | N-Channel 1200V 55A (Tc) 262W (Tc) Through Hole TO-247N |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 55A (Tc) |
| Email: | [email protected] |
