| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 410µA |
| Vgs (Max): | +22V, -6V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | TO-268 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.1A, 18V |
| Power Dissipation (Max): | 44W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Andre navne: | SCT2H12NYTBCT |
| Driftstemperatur: | 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 184pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 18V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 18V |
| Afløb til Source Voltage (VDSS): | 1700V |
| Detaljeret beskrivelse: | N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4A (Tc) |
| Email: | [email protected] |
