| Kondisyon | New and Original |
|---|---|
| Pinanggalingan | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 3.5V @ 1mA |
| Vgs (Max): | +25V, -10V |
| teknolohiya: | SiCFET (Silicon Carbide) |
| Supplier aparato Package: | HiP247™ |
| serye: | - |
| Rds On (Max) @ Id, Vgs: | 290 mOhm @ 10A, 20V |
| Power pagwawaldas (Max): | 175W (Tc) |
| packaging: | Tube |
| Package / Kaso: | TO-247-3 |
| Ibang pangalan: | 497-15170 |
| operating Temperature: | -55°C ~ 200°C (TJ) |
| Salalayan Type: | Through Hole |
| Ang Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Libreng Status / Katayuan ng RoHS: | Lead free / RoHS Compliant |
| Input Kapasidad (Ciss) (Max) @ Vds: | 650pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 20V |
| Type FET: | N-Channel |
| FET Tampok: | - |
| Drive Boltahe (Max Rds On, Min Rds On): | 20V |
| Alisan ng tubig sa Source Boltahe (Vdss): | 1200V |
| Detalyadong Paglalarawan: | N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole HiP247™ |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 20A (Tc) |
| Email: | [email protected] |
