| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
| VCE Sättigung (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
| Transistor-Typ: | NPN - Pre-Biased |
| Supplier Device-Gehäuse: | SST3 |
| Serie: | - |
| Widerstand - Emitterbasis (R2): | 1 kOhms |
| Widerstand - Basis (R1): | 1 kOhms |
| Leistung - max: | 200mW |
| Verpackung: | Cut Tape (CT) |
| Verpackung / Gehäuse: | TO-236-3, SC-59, SOT-23-3 |
| Andere Namen: | DTD113ECT116CT |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 10 Weeks |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Frequenz - Übergang: | 200MHz |
| detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 33 @ 50mA, 5V |
| Strom - Collector Cutoff (Max): | 500nA |
| Strom - Kollektor (Ic) (max): | 500mA |
| Email: | [email protected] |
