SI6562CDQ-T1-GE3
SI6562CDQ-T1-GE3
Part Number:
SI6562CDQ-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N/P-CH 20V 6.7A 8-TSSOP
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
61319 Pieces
Delivery Time:
1-2 days
Data sheet:
SI6562CDQ-T1-GE3.pdf

Introduction

SI6562CDQ-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI6562CDQ-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI6562CDQ-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:1.5V @ 250µA
Supplier Device Package:8-TSSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:22 mOhm @ 5.7A, 4.5V
Power - Max:1.6W, 1.7W
Packaging:Cut Tape (CT)
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Other Names:SI6562CDQ-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:850pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Detailed Description:Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP
Current - Continuous Drain (Id) @ 25°C:6.7A, 6.1A
Base Part Number:SI6562
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments