SI6562DQ-T1-GE3
SI6562DQ-T1-GE3
Part Number:
SI6562DQ-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N/P-CH 20V 8-TSSOP
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
75399 Pieces
Delivery Time:
1-2 days
Data sheet:
SI6562DQ-T1-GE3.pdf

Introduction

SI6562DQ-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI6562DQ-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI6562DQ-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:600mV @ 250µA (Min)
Supplier Device Package:8-TSSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:30 mOhm @ 4.5A, 4.5V
Power - Max:1W
Packaging:Cut Tape (CT)
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Other Names:SI6562DQ-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:25nC @ 4.5V
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Detailed Description:Mosfet Array N and P-Channel 20V 1W Surface Mount 8-TSSOP
Current - Continuous Drain (Id) @ 25°C:-
Base Part Number:SI6562
Email:[email protected]

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