SI6473DQ-T1-GE3
SI6473DQ-T1-GE3
Part Number:
SI6473DQ-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 20V 6.2A 8-TSSOP
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
52853 Pieces
Delivery Time:
1-2 days
Data sheet:
SI6473DQ-T1-GE3.pdf

Introduction

SI6473DQ-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI6473DQ-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI6473DQ-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:12.5 mOhm @ 9.5A, 4.5V
Power Dissipation (Max):1.08W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:70nC @ 5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 6.2A (Ta) 1.08W (Ta) Surface Mount 8-TSSOP
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments