RN1427TE85LF
Part Number:
RN1427TE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 200MW SMINI
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
53674 Pieces
Delivery Time:
1-2 days
Data sheet:
RN1427TE85LF.pdf

Introduction

RN1427TE85LF best price and fast delivery.
BOSER Technology is the distributor for RN1427TE85LF, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for RN1427TE85LF by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 50mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:S-Mini
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):2.2 kOhms
Power - Max:200mW
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:RN1427(TE85L,F)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:11 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:300MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 800mA 300MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 100mA, 1V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):800mA
Base Part Number:RN142*
Email:[email protected]

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