QJD1210010
Part Number:
QJD1210010
Manufacturer:
Powerex, Inc.
Description:
MOSFET 2N-CH 1200V 100A SIC
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
60208 Pieces
Delivery Time:
1-2 days
Data sheet:
1.QJD1210010.pdf2.QJD1210010.pdf

Introduction

QJD1210010 best price and fast delivery.
BOSER Technology is the distributor for QJD1210010, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for QJD1210010 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 10mA
Supplier Device Package:Module
Series:-
Rds On (Max) @ Id, Vgs:25 mOhm @ 100A, 20V
Power - Max:1080W
Packaging:Bulk
Package / Case:Module
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:10200pF @ 800V
Gate Charge (Qg) (Max) @ Vgs:500nC @ 20V
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Detailed Description:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 100A (Tc) 1080W Chassis Mount Module
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Email:[email protected]

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