SIZ900DT-T1-GE3
SIZ900DT-T1-GE3
Part Number:
SIZ900DT-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET 2N-CH 30V 24A POWERPAIR
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
95182 Pieces
Delivery Time:
1-2 days
Data sheet:
SIZ900DT-T1-GE3.pdf

Introduction

SIZ900DT-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SIZ900DT-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIZ900DT-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.4V @ 250µA
Supplier Device Package:6-PowerPair™
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:7.2 mOhm @ 19.4A, 10V
Power - Max:48W, 100W
Packaging:Cut Tape (CT)
Package / Case:6-PowerPair™
Other Names:SIZ900DT-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
FET Type:2 N-Channel (Half Bridge)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 30V 24A, 28A 48W, 100W Surface Mount 6-PowerPair™
Current - Continuous Drain (Id) @ 25°C:24A, 28A
Base Part Number:SIZ900
Email:[email protected]

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